1997 Mar 03

3

Philips Semiconductors

Product specification

NPN microwave power transistor

PPC5001T

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

Note

1. At 0.1 mm from the case.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

collector-base voltage

open emitter

−

40

V

collector-emitter voltage

35

V

collector-emitter voltage

open emitter

−

16

V

emitter-base voltage

open collector

−

3V

collector current (DC)

−

0.25

A

total power dissipation

−

4W

storage temperature

−65

+200

°C

junction temperature

−

200

°C

soldering temperature

t

≤ 10 s; note 1

−

235

°C

Fig.2

Power dissipation derating as a function of

mounting-base temperature.

handbook,

0

50

100

200

5

0

4

150

3

2

1

MGD975

Ptot max

(W)

Tmb (°C)