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NCE65T360D Scheda tecnica(PDF) 2 Page - Wuxi NCE Power Semiconductor Co., Ltd |
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NCE65T360D Scheda tecnica(HTML) 2 Page - Wuxi NCE Power Semiconductor Co., Ltd |
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2 / 10 page  Wuxi NCE Power Co., Ltd Page http://www.ncepower.com v1.1 2 NCE65T360D,NCE65T360,NCE65T360F Parameter Symbol NCE65T360D NCE65T360 NCE65T360F Unit Drain Source voltage slope, VDS ≤480 V, dv/dt 50 V/ns Reverse diode dv/dt，VDS ≤480 V,ISD<ID dv/dt 15 V/ns Operating Junction and Storage Temperature Range TJ,TSTG -55...+150 °C * limited by maximum junction temperature Table 2. Thermal Characteristic Parameter Symbol NCE65T360D NCE65T360 NCE65T360F Unit Thermal Resistance，Junction-to-Case（Maximum） RthJC 1.24 3.83 °C /W Thermal Resistance，Junction-to-Ambient （Maximum） RthJA 62 80 °C /W Table 3. Electrical Characteristics (TA=25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit On/off states Drain-Source Breakdown Voltage BVDSS VGS=0V ID=250μA 650 V Zero Gate Voltage Drain Current(Tc=25℃) IDSS VDS=650V,VGS=0V 0.05 1 μA Zero Gate Voltage Drain Current(Tc=125℃) IDSS VDS=650V,VGS=0V 100 μA Gate-Body Leakage Current IGSS VGS=±20V,VDS=0V ±100 nA Gate Threshold Voltage VGS(th) VDS=VGS,ID=250μA 3 3.5 4 V Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=7A 290 360 mΩ Dynamic Characteristics Input Capacitance Clss VDS=50V,VGS=0V, F=1.0MHz 870 pF Output Capacitance Coss 54 pF Reverse Transfer Capacitance Crss 1.8 pF Total Gate Charge Qg VDS=480V,ID=11.5A, VGS=10V 19 nC Gate-Source Charge Qgs 6 nC Gate-Drain Charge Qgd 6.5 nC Switching times Turn-on Delay Time td(on) VDD=380V,ID=5.5A, RG=3Ω,VGS=10V 11 nS Turn-on Rise Time tr 8 nS Turn-Off Delay Time td(off) 58 70 nS Turn-Off Fall Time tf 9 14 nS Source- Drain Diode Characteristics Source-drain current(Body Diode) ISD TC=25°C 11.5 A Pulsed Source-drain current(Body Diode) ISDM 46 A Forward on voltage VSD Tj=25°C,ISD=11.5A,VGS=0V 0.9 1.2 V Reverse Recovery Time trr Tj=25°C,IF=5.8A, di/dt=100A/μs 220 nS Reverse Recovery Charge Qrr 2.2 uC Peak Reverse Recovery Current Irrm 19 A Notes: 1.Repetitive Rating: Pulse width limited by maximum junction temperature 2. Tj=25℃,VDD=50V,VG=10V, RG=25Ω |
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