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NCE70T360D Scheda tecnica(PDF) 1 Page - Wuxi NCE Power Semiconductor Co., Ltd |
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NCE70T360D Scheda tecnica(HTML) 1 Page - Wuxi NCE Power Semiconductor Co., Ltd |
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1 / 11 page ![]() Wuxi NCE Power Co., Ltd Page http://www.ncepower.com v1.1 1 NCE70T360D,NCE70T360,NCE70T360F N-Channel Super Junction Power MOSFET Ⅲ General Description The series of devices use advanced trench gate super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fits the industry’s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications. Features ● New technology for high voltage device ● Low on-resistance and low conduction losses ● small package ● Ultra Low Gate Charge cause lower driving requirements ● 100% Avalanche Tested ● ROHS compliant Application ● Power factor correction(PFC) ● Switched mode power supplies(SMPS) ● Uninterruptible Power Supply(UPS) VDS 700 V RDS(ON)TYP 330 mΩ ID 11.5 A Package Marking And Ordering Information Device Device Package Marking NCE70T360D TO-263 NCE70T360D NCE70T360 TO-220 NCE70T360 NCE70T360F TO-220F NCE70T360F Table 1. Absolute Maximum Ratings (TC=25℃) Parameter Symbol NCE70T360D NCE70T360 NCE70T360F Unit Drain-Source Voltage ( VGS=0V) VDS 700 V Gate-Source Voltage ( VDS=0V), AC(f>1HZ) VGS ± 30 V Continuous Drain Current at TC =25°C ID (DC) 11.5 11.5* A Continuous Drain Current at TC =100°C ID (DC) 7 7* A Pulsed drain current (Note 1) IDM (pluse) 46 46* A Maximum Power Dissipation(TC=25℃) Derate above 25°C PD 101 0.81 32.6 0.26 W W/ °C Single pulse avalanche energy (Note2) EAS 144 mJ Avalanche current(Note 1) IAR 6 A Repetitive Avalanche energy ,tAR limited by Tjmax (Note 1) EAR 0.5 mJ Schematic diagram TO-263 TO-220 TO-220F |
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