SDR1JHFSMS datasheet(1/2 Pages) SSDI

Il numero della parte	SDR1JHFSMS

Spiegazioni elettronici	1 AMP 50 - 1200 V 35 nsec Hyper Fast Rectifier

PDF	2 Pages

Scroll/Zoom	100%

Produttore elettronici	SSDI [Solid States Devices, Inc]

Homepage	http://www.ssdi-power.com

Logo

1 / 2 page

Solid State Devices, Inc.

14830 Valley View Blvd * La Mirada, Ca 90638

Phone: (562) 404-7855 * Fax: (562) 404-1773

ssdi@ssdi-power.com * www.ssdi-power.com

DESIGNER’S DATA SHEET

Features:

• Hyper Fast Recovery: 35 nsec maximum

• PIV to 1200 Volts

• Hermetically Sealed

• Void Free Construction

• For High Efficiency Applications

• Single Chip Construction

• Low Reverse Leakage

• TX, TXV, S Level screening Available

SDR1AHF & SDR1AHFSMS

thru

SDR1NHF & SDR1NHFSMS

1 AMP

50 - 1200 V

35 nsec

Hyper Fast Rectifier

Axial Lead Diode

SMS

Maximum Ratings

Symbol

Value

Units

Peak Repetitive Reverse and DC Blocking Voltage

SDR1AHF

SDR1BHF

SDR1DHF

SDR1GHF

SDR1JHF

SDR1KHF

SDR1MHF

SDR1NHF

VRRM

VRSM

VR

50

100

200

400

600

800

1000

1200

Volts

Average Rectified Forward Current

(Resistive Load, 60 hz Sine Wave, TA = 25 °C)

Io

1.0

Amps

Peak Surge Current

(8.3 ms Pulse, Half Sine Wave, TA = 25 °C)

IFSM

25

Amps

Operating & Storage Temperature

TOP & TSTG

-65 to +175

ºC

Maximum Thermal Resistance

Junction to Leads, L = 3/8

Junction to Tabs

RθJE

35

28

ºC/W

NOTE: All specifications are subject to change without notification.

SCD's for these devices should be reviewed by SSDI prior to release.

DATA SHEET #: RH0119C

DOC

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