NOTE: All specifications are subject to change without notification.

SCD's for these devices should be reviewed by SSDI prior to release.

DATA SHEET #: TG0005A

DOC

Solid State Devices, Inc.

14830 Valley View Blvd * La Mirada, Ca 90638

Phone: (562) 404-7855 * Fax: (562) 404-1773

ssdi@ssdi-power.com * www.ssdi-power.com

DESIGNER’S DATA SHEET

TO-254 and TO-254Z

TO-258 and TO-259

SSG55N60 series

55 AMP /600 Volts

1.65 V saturation

ultrafast IGBT

Features:

•

Lowest ON-resistance in the industry

•

Hermetically Sealed, Isolated Package

•

Low Total Gate Charge

•

Fast Switching

•

TX, TXV, S-Level screening available

Maximum Ratings

Symbol

Value

Units

Collector – Emitter Breakdown Voltage

600

V

Gate – Emitter Voltage

±20

V

Max. Continuous Collector Current

55

27

A

Max. Instantaneous Drain Current (Tj limited)

200

A

Clamped Inductive Load current

L= 10 uH

200

A

Repetitive Reverse Voltage Avalanche Energy

Limited by Tj max

20

mJ

Total Power Dissipation

195

W

Operating & Storage Temperature

-55 to +150

ºC

Maximum Thermal Resistance (Junction to Case)

0.64 (typ 0.35)

ºC/W

TO-254 (M)

PIN 3

PIN 2

PIN 1

TO-254Z (Z)

PIN 1

PIN 3

PIN 2

TO-258 (N)

TO-259 (P)