SFT501SLASHGR datasheet(2/2 Pages) SSDI

2 / 2 page

SOLID STATE DEVICES, INC.

14830 Valley View Blvd * La Mirada, Ca 90638

Phone: (562) 404-7855 * Fax: (562) 404-1773

150

BVCEO

Collector-Emitter Breakdown Voltage

(IC = 50mA)

200

Collector-Base Breakdown Voltage

(IC = 200 µA)

BVEBO

Emitter-Base Breakdown Voltage

(IE = 200 µA)

500

ICBO

Collector Cutoff Current

(VCB = 100 VDC)

µµµµµA

-1

ICEO

Collector Cutoff Current

(VCE = 100 VDC)

MIN

MAX

ELECTRICAL CHARACTERISTICS 4/

SYMBOL

UNITS

Emitter Cutoff Current

(VEB = 6 VDC)

IEBO

500

DC Current Gain* (VCE = 5.0VDC)

(SFT501)

(SFT503)

0.75

1.5

Collector-Emitter Saturation

Voltage*

VCE(SAT)

VDC

hFE

Base-Emitter Saturation

Voltage*

1.3

1.5

VDC

VBE (SAT)

Current Gain Bandwidth Product

(IC = 500 mADC , VCE = 5 VDC, f = 10 MHz)

MHz

600

Input Capacitance

(VBE = 10 VDC , IC = 0 ADC, f = 1.0 MHz)

Cib

(VCC = 50 VDC ,

IC = 5 ADC,

IB1 = IB2 = 500 mADC)

Rise Time

250

BVCBO

Delay Time

(IC = 50 mADC)

(IC = 2.5 ADC)

(IC = 5.0 ADC)

(IC = 50 mADC)

(IC = 2.5 ADC)

(IC = 5.0 ADC)

NOTES:

Pulse Test: Pulse Width = 300

µs, Duty Cycle = 2%

For Ordering Information, Price, and Availability Contact Factory.

Screening per MIL-PRF-19500.

For Package Outlines Contact Factory.

All Electrical Characteristics @ 25oC, Unless Otherwise Specified.

SFT501/G and SFT503/G

SERIES

225

Output Capacitance

(VCB = 10 VDC , IE = 0 ADC, f = 1.0 MHz)

Cob

Fall Time

Storage Time

900

300

(IC = 2.5 ADC, IB = 250 mADC)

(IC = 5.0 ADC, IB = 500 mADC)

(IC = 2.5 ADC, IB = 250 mADC)

(IC = 5.0 ADC, IB = 500 mADC)

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