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ISF1236 Scheda tecnica(PDF) 1 Page - Inchange Semiconductor Company Limited |
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ISF1236 Scheda tecnica(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() isc Trench P-Channel MOSFET Transistor ISF1236 www.iscsemi.com 1 FEATURES · Utilized DH advanced Trench technology · Drain Current -ID= -30A@ TC=25℃ · Drain Source Voltage -VDSS= -100V(Min) · Static Drain-Source On-Resistance -RDS(on) = 50mΩ(Max)@VGS= -10V DESCRIPTION · Motor control and drive · Battery management · Genaral Power Switching ABSOLUTE MAXIMUM RATINGS(Ta=25℃) THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage -100 V VGS Gate-Source Voltage-Continuous ± 20 V ID Continuous Drain Current -30 A IDM Drain Current(Pulse ) -120 A PD Total Dissipation @TC=25℃ 200 W TJ Max. Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 0.625 ℃ /W 3 2 1 TO-220C Package |
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