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KSC5021 Scheda tecnica(PDF) 1 Page - Inchange Semiconductor Company Limited |
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KSC5021 Scheda tecnica(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 3 page ![]() Silicon NPN Power Transistor KSC5021 www.iscsemi.com 1 FEATURES · Large current capacitance · High speed switching · Low saturation voltage DESCRIPTION · Switching Regulator · Driver Circuit ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 800 V VCEO Collector-Emitter Voltage 500 V VEBO Emitter-Base Voltage 7 V IC Collector Current- Continuous 5 A IB Base Current- Continuous 2 A ICP Collector Current-Pulse 10 A PC Collector Power Dissipation @ TC=25℃ 50 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 0.7 ℃ /W 3 2 1 TO-220C Package Pin 1 Base 2 Collector 3 Emitter |
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