S1A − S1M

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2

ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) (Note 1)

Symbol

Parameter

Value

Unit

S1A

S1B

S1D

S1G

S1J

S1K

S1M

VRRM

Maximum Repetitive Reverse Voltage

50

100

200

400

600

800

1000

V

IF(AV)

Average Rectified Forward Current at

TA = 100°C

1.0

A

IFSM

Non−Repetitive Peak Forward Surge

Current 8.3 ms Single Half−Sine−Wave

30

A

TSTG

Storage Temperature Range

−55 to +150

°C

TJ

Operating Junction Temperature

−55 to +150

°C

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality

should not be assumed, damage may occur and reliability may be affected.

1. These ratings are limiting values above which the serviceability of any semiconductor device maybe impaired.

THERMAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Note 1)

Symbol

Characteristic

Value

Unit

PD

Power Dissipation

1.4

W

RqJA

Thermal Resistance, Junction to Ambient (Note 2)

85

°C/W

RqJA

Thermal Resistance, Junction to Ambient (Note 3)

170

°C/W

ΨJL

Junction−Lead Thermal Characteristics (Note 3)

25

°C/W

2. Device mounted on FR−4 PCB, land pattern size: 25 mm2 (5 x 5 mm).

3. Device mounted on FR−4 PCB, land pattern size: 4.6375 mm2 (2.65 x 1.75 mm).

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

VF

Forward Voltage

IF = 1.0 A

−

−

1.1

V

trr

Reverse Recovery Time

IF = 0.5 A, IR = 1.0 A

Irr = 0.25 A

−

1.8

−

ms

IR

Reverse Current at Rated VR

TA = 25°C

−

−

1.0

mA

TA = 125°C

−

−

50

CJ

Junction Capacitance

VR = 4.0 V, f = 1.0 MHz

−

6.6

−

pF

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.