TSB622 datasheet(4/36 Pages) STMICROELECTRONICS

4 / 36 page

Electrical characteristics

Table 4. Electrical characteristics VCC = 5 V, Vicm = VCC/2, T = 25 °C (unless otherwise specified).

Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

VIO

Input offset voltage

T = 25 °C

±3

Tmin < T < Tmax

±3.5

|∆ VIO/∆T|

Input offset voltage drift

Tmin < T < Tmax

0.9

µV/°C

IIB

Input bias current

T = 25 °C

Tmin < T < Tmax

1000

IIO

Input offset current

T = 25 °C

Tmin < T < Tmax

1000

AVD

Large signal voltage gain

VOUT = 0.3 to (VCC -0.3 V)

RL = 10 kΩ connected to VCC/2

113

Tmin < T < Tmax

CMR

Common-mode rejection

ratio

VICM = 0 to VCC -1.5 V, VOUT = VCC/2

Tmin < T < Tmax

VOL

Output swing from negative

rail

No load

Tmin < T < Tmax

ISINK = 2 mA

Tmin < T < Tmax

130

VOH

Output swing from positive

rail

No load

Tmin < T < Tmax

ISOURCE = 2 mA

Tmin < T < Tmax

120

IOUT

ISINK

VOUT = VCC+

Tmin < T < Tmax

ISOURCE

VOUT = VCC-

Tmin < T < Tmax

ICC

Supply current (per channel)

No load, VOUT = VCC/2

2.2

Tmin < T < Tmax

3.8

AC performance

GBP

Gain bandwidth product

RL = 10 kΩ, CL = 22 pF

MHz

Tmin < T < Tmax

Slew rate

RL = 10 kΩ, CL = 22 pF, AV = 1 V/V,

10% to 90%

V/µs

Tmin < T < Tmax

Φm

Phase margin

RL = 10 kΩ, CL = 22 pF

Gain margin

RL = 10 kΩ, CL = 22 pF

Equivalent input noise

density

f = 10 kHz

nV/√Hz

f = 100 kHz

EN P-P

Input voltage noise

0.1 Hz < f < 10 Hz

µVPP

TSB952

Electrical characteristics

DS14576 - Rev 1

page 4/36

TSB622 Scheda tecnica(PDF) 4 Page - STMicroelectronics

TSB622 Scheda tecnica(HTML) 4 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36

Scheda tecnica Scarica

Link URL