Data Sheet

AD5116

Rev. B | Page 5 of 16

INTERFACE TIMING SPECIFICATIONS

VDD = 2.3 V to 5.5 V; all specifications TMIN to TMAX, unless otherwise noted.

Table 3.

Parameter

Test Conditions/Comments

Min

Typ

Max

Unit

Description

t

1

8

ms

Debounce time

t

2

1

sec

Manual to auto scan time

t

3

140

ms

Auto scan step

t

4

ASE = 0 V, PD = GND, PU = GND

1

sec

Auto save execute time

t

5

ASE = VDD

8

ms

Low pulse time to manual storage

t

EEPROM_PROGRAM

1

15

50

ms

Memory program time

t

POWER_UP

2

50

µs

Power-on EEPROM restore time

1 EEPROM program time depends on the temperature and EEPROM write cycles. Higher timing is expected at a lower temperature and higher write cycles.

2 Maximum time after V

DD is equal to 2.3 V.

TIMING DIAGRAMS

PU

RW

t1

PD (LOW)

Figure 2. Manual Increment Mode Timing

PU

t1

t2

t3

PD (LOW)

RW

Figure 3. Auto Increment Mode Timing

PD

t1

t4

EEPROM

DATA

NEW DATA

tEEPROM

PROGRAM

RW

ASE (LOW)

Figure 4. Auto Save Mode Timing

PD/PU (LOW)

t5

EEPROM

DATA

NEW DATA

tEEPROM

PROGRAM

ASE

Figure 5. Manual Save Mode Timing

PD

t1

RW

RW = 45Ω

ASE

Figure 6. End Scale Indication Timing