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ADL8101ACPZN-R7 Scheda tecnica(PDF) 1 Page - Analog Devices |
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ADL8101ACPZN-R7 Scheda tecnica(HTML) 1 Page - Analog Devices |
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1 / 35 page ![]() Data Sheet ADL8101 10 kHz to 22 GHz, Ultrawideband, Low Noise Amplifier Rev. 0 DOCUMENT FEEDBACK TECHNICAL SUPPORT Information furnished by Analog Devices is believed to be accurate and reliable "as is". However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners. FEATURES ► Wideband operation: 10 kHz to 22 GHz ► Single positive supply (self biased) typical: 5 V and 90 mA ► RBIAS drain current adjustment pin ► Gain: 14 dB typical from 10 kHz to 16 GHz ► Noise figure: 3.5 dB typical from 10 kHz to 16 GHz ► Extended operating temperature range: −55°C to +125°C ► RoHS-compliant, 2 mm × 2 mm, 8-lead lead frame chip scale package [LFCSP] APPLICATIONS ► Telecommunications ► Instrumentation ► Radar ► Electronic warfare GENERAL DESCRIPTION The ADL8101 is an ultrawideband low noise amplifier (LNA) that operates from 10 kHz to 22 GHz. The typical gain and noise figure are 14 dB and 3.5 dB, respectively, from 10 kHz to 16 GHz. The output power for 1 dB compression (OP1dB), output third-order intercept (OIP3), and output second-order intercept (OIP2) are 15 dBm, 26 dBm, and 29 dBm, respectively, from 10 kHz to 16 GHz. The nominal quiescent current (IDQ), which can be adjusted, is 90 mA from a 5 V supply voltage (VDD). The internally matched, DC-coupled RF input and output pins require external AC coupling capacitors along with a bias inductor on RFOUT. The ADL8101 is fabricated on a pseudomorphic high electron mobi- lity transistor (pHEMT) process. It is housed in an RoHS-compliant, 2 mm × 2 mm, 8-lead LFCSP and is specified for operation from −55°C to +125°C. FUNCTIONAL BLOCK DIAGRAM Figure 1. Functional Block Diagram |
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