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EM5845VT Scheda tecnica(PDF) 3 Page - Excelliance MOS Corp. |
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EM5845VT Scheda tecnica(HTML) 3 Page - Excelliance MOS Corp. |
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3 / 13 page ![]() 2016/02/24 A.2 3 EM5845 Absolute Maximum Ratings (Note1) VIN ------------------------------------------------------------------------------------------------------ -0.3V to +6.0V VCC --------------------------------------------------------------------------------------------------- -0.3V to +6.0V VSW ----------------------------------------------------------------------------- ---------------------- -0.3V to +6.0V <20n s -- - -- -- - -- -- - -- -- - -- -- - -- -- - -- - -- -- - -- -- - -- -- -- - -- -- - -- -- - -- - -- -- - -- -- - -- -- - - 2.5V to +9V EN,VFB,PG---------------------------------------------------------------------------------------------- -0.3V to +6.0V Package Thermal Resistance, θJA,DFN-10L 3X3 ------------------------------------ 7 0 ° C /W Power Dissipation, PD @ TA = 25°C, DFN-10L 3X3 --------------------------------------------------- 1.45W Junction Temperature------------------------------------------------------------------------------------------ 150°C Lead Temperature (Soldering, 10 sec.)-------------------------------------------------------------------- 260°C Storage Temperature ---------------------------------------------------------------- ------------ -65°C to 150°C ESD susceptibility (Note3) HBM (Human Body Mode)----------------------------------------------------------------------------------- 2KV MM (Machine Mode)----------------------------------------------------------------------------------------- 200V Recommended Operating Conditions (Note4) Control Voltage, VCC,VIN -------------------------------------------------------------------------- +2.7V to +5.5V Junction Temperature ----------------------------------------------------------------------------- -40°C to 125°C Ambient Temperature ------------------------------------------------------------------------------- -40°C to 85°C Electrical Characteristics VIN=5V, TA=25°C, unless otherwise specified Parameter Symbol Test Conditions Min Typ Max Units Supply Input Section Vcc Shutdown Current ISD VEN=0V 0.1 uA Supply Voltage Vin 2.7 5.5 V Power Voltage Vcc 2.7 5.5 V VCC Quiescent Current IcQ 700 uA VIN Quiescent Current IIQ 100 uA Power on Reset Threshold UVLO VIN&VCC wake up 2.2 2.4 2.6 V Power on Reset Hysteresis UVLO 0.3 V Enable Enable High Voltage VEN_H 1.2 V Enable Low Voltage VEN_L 0.4 V Enable Input Current VEN=2V 2 uA VEN=0V 0 uA Switching Frequency Frequency Fs VIN=5V, VOUT=1.2V, IOUT=1A 0.8 1 1.2 MHz Min. Off Time TOFF 50 100 150 ns Switch High Side MOS ON Resistance RON_HS 80 mΩ High Side MOS Current Limit ICL 4.8 A Low Side MOS ON Resistance RON_LS 40 mΩ Reference Voltage Internal Reference VREF 0.594 0.6 0.606 V |
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