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MAT12AHZ Scheda tecnica(PDF) 4 Page - Analog Devices

Il numero della parte MAT12AHZ
Spiegazioni elettronici  Audio, Dual-Matched NPN Transistor
PDF  12 Pages
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Produttore elettronici  AD [Analog Devices]
Homepage  http://www.analog.com
Logo AD - Analog Devices

MAT12AHZ Scheda tecnica(HTML) 4 Page - Analog Devices

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MAT12
Data Sheet
Rev. A | Page 4 of 12
ABSOLUTE MAXIMUM RATINGS
Table 2.
Parameter
Rating
Breakdown Voltage of
Collector-to-Base Voltage (BVCBO)
40 V
Breakdown Voltage of
Collector-to-Emitter Voltage (BVCEO)
40 V
Breakdown Voltage of
Collector-to-Collector Voltage (BVCC)
40 V
Breakdown Voltage of
Emitter-to-Emitter Voltage (BVEE)
40 V
Collector Current (IC)
20 mA
Emitter Current (IE)
20 mA
Storage Temperature Range
−65°C to +150°C
Operating Temperature Range
−40°C to +85°C
Junction Temperature Range
−65°C to +150°C
Lead Temperature (Soldering, 60 sec)
300°C
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
THERMAL RESISTANCE
θJA is specified for the worst-case conditions, that is, a device
soldered in a circuit board for surface-mount packages.
Table 3. Thermal Resistance
Package Type
θJA
θJC
Unit
6-Lead TO-78
150
45
°C/W
ESD CAUTION



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