MCP23016-ISLASHML datasheet(19/38 Pages) MICROCHIP

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DS20090C-page 19

MCP23016

2.0

ELECTRICAL CHARACTERISTICS

Absolute Maximum Ratings †

Ambient temperature under bias................................................................................................................ -55 to +125°C

Storage temperature .............................................................................................................................. -65°C to +150°C

Voltage on any pin with respect to VSS ......................................................................................... -0.3V to (VDD + 0.3V)

Voltage on VDD with respect to VSS ......................................................................................................... -0.3V to +6.5V

Total power dissipation (Note 1) ............................................................................................................................ 1.0 W

Maximum current out of VSS pin .......................................................................................................................... 300 mA

Maximum current into VDD pin ............................................................................................................................. 250 mA

Input clamp current, IIK (VI < 0, or VI > VDD) .......................................................................................................

± 20 mA

Output clamp current, IOK (VO < 0, or VO > VDD) ................................................................................................

± 20 mA

Maximum output current sunk by any I/O pin......................................................................................................... 25 mA

Maximum output current sourced by any I/O pin ................................................................................................... 25 mA

Maximum current sunk by combined PORTS ...................................................................................................... 200 mA

Maximum current sourced by combined PORTS ................................................................................................ 200 mA

Note 1: Power dissipation is calculated as follows:

Pdis = VDD x {IDD -

∑ IOH} + ∑ {(VDD-VOH) x IOH} + ∑(VOl x IOL)

† NOTICE: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the

device. This is a stress rating only and functional operation of the device at those or any other conditions above those

indicated in the operation listings of this specification is not implied. Exposure to maximum rating conditions for

extended periods may affect device reliability.

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