Electrical characteristics

ST13009

4/11

Doc ID 11491 Rev 3

2

Electrical characteristics

(Tcase = 25°C unless otherwise specified)

Table 4.

Electrical characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ICEV

Collector cut-off current

(VBE = -1.5 V)

VCE = 700 V

VCE = 700 V TC = 100°C

10

500

µA

µA

IEBO

Emitter cut-off current

(IC = 0)

VEB = 10 V

10

µA

VCEO(sus)

(1)

1.

Pulsed duration = 300 µs, duty cycle

≤2 %

Collector-emitter

sustaining voltage

(IB = 0)

IC = 10 mA

400

V

VCE(sat)

(1)

Collector-emitter

saturation voltage

IC = 4 A

_

IB = 0.8 A

IC = 5 A _ _

IB = 1 A

IC = 8 A _ _

IB = 1.6 A

IC = 12 A _ _

IB = 3 A

0.85

0.9

1.25

2.5

V

V

V

V

VBE(sat)

(1)

Base-emitter saturation

voltage

IC = 5 A

_

IB = 1 A

IC = 8 A _ _

IB = 1.6 A

1.2

1.6

V

V

hFE

(1)(2)

2.

Product is pre-selected in DC current gain (group L and group H). STMicroelectronics reserves the right to

ship either groups according to production availability. Please contact your nearest STMicroelectronics

sales office for delivery details.

DC current gain

IC = 5 A

_

VCE = 5 V

Group L

Group H

IC = 8 A

_ _

VCE = 5 V

15

26

10

31

39

30

ts

tf

Inductive load

Storage time

Fall time

IC = 5 A

VCC = 250 V

IB1 = 1 A

IB2 = -2 A

L = 200

µH

see

Figure 9

1.6

60

2.5

110

µs

ns

ts

tf

Inductive load

Storage time

Fall time

IC = 5 A

VCC = 125 V

IB1 = - IB2 = 1.6 A

L = 200

µH

tc = 125 °C

see

Figure 9

2.3

110

µs

ns