STF21P6LLF6 datasheet(1/13 Pages) STMICROELECTRONICS

Il numero della parte	STF21P6LLF6

Spiegazioni elettronici	P-channel -60 V, 25.5 mΩ typ., -21 A STripFET™ F6 Power MOSFET in a TO-220FP package

PDF	13 Pages

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Produttore elettronici	STMICROELECTRONICS [STMicroelectronics]

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November 2016

DocID029893 Rev 1

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This is information on a product in full production.

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STF21P6LLF6

P-channel -

60 V, 25.5 mΩ typ., -21 A STripFET™

F6 Power MOSFET in a TO-220FP package

Datasheet - production data

Figure 1: Internal schematic diagram

Features

Order code

VDS

RDS(on) max.

ID

PTOT

STF21P6LLF6

-60 V

28.5 mΩ

-21 A

25 W



Very low on-resistance



Very low gate charge



High avalanche ruggedness



Low gate drive power loss

Applications



Switching applications

Description

This device is a P-channel Power MOSFET

developed using the STripFET™ F6 technology,

with a new trench gate structure. The resulting

Power MOSFET exhibits very low RDS(on) in all

packages.

Table 1: Device summary

Order code

Marking

Package

Packing

STF21P6LLF6

21P6LLF6

TO-220FP

Tape and reel

TO-220FP

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