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NTD4909N Scheda tecnica(PDF) 1 Page - Inchange Semiconductor Company Limited |
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NTD4909N Scheda tecnica(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() isc N-Channel MOSFET Transistor NTD4909N www.iscsemi.com 1 FEATURES ·Drain Current -ID= 41A@ TC=25℃ ·Drain Source Voltage -VDSS= 30V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 8.0mΩ(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 30 V VGS Gate-Source Voltage-Continuous ± 20 V ID Drain Current-Continuous 41 A IDM Drain Current-Single Pulse 167 A PD Total Dissipation @TC=25℃ 30 W TJ Max. Operating Junction Temperature 175 ℃ Tstg Storage Temperature -55~175 ℃ SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 5.0 ℃ /W |
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