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STP90NF03L Scheda tecnica(PDF) 4 Page - STMicroelectronics

Il numero della parte STP90NF03L
Spiegazioni elettronici  N-channel 30V - 0.0056Ω -90A TO-220/I2PAK Low gate charge STripFET??Power MOSFET
PDF  13 Pages
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Produttore elettronici  STMICROELECTRONICS [STMicroelectronics]
Homepage  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STP90NF03L Scheda tecnica(HTML) 4 Page - STMicroelectronics

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Electrical characteristics
STP90NF03L - STB90NF03L-1
4/13
2
Electrical characteristics
(TCASE=25°C unless otherwise specified)
Table 3.
On/off states
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source breakdown
voltage
ID = 250 µA, VGS= 0
30
V
IDSS
Zero gate voltage drain
current (VGS = 0)
VDS = Max rating,
VDS = Max rating @125°C
1
10
µA
µA
IGSS
Gate body leakage current
(VDS = 0)
VGS = ±20V
±
100
nA
VGS(th)
Gate threshold voltage
VDS= VGS, ID = 250µA
12.5
V
RDS(on)
Static drain-source on
resistance
VGS= 10V, ID= 45A
VGS= 5V, ID= 45A
0.0056
0.007
0.0065
0.012
Ω
Ω
Table 4.
Dynamic
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
gfs
(1)
1.
Pulsed: pulse duration=300µs, duty cycle 1.5%
Forward transconductance
VDS > ID(on) x RDS(on)max,
ID = 45A
40
S
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS =25V, f=1 MHz, VGS=0
2700
860
170
pF
pF
pF
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD=24V, ID = 90A
VGS =5V
35
10
18
47
nC
nC
nC
Table 5.
Switching times
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
td(on)
tr
Turn-on delay time
rise time
VDD = 15V, ID = 45A,
RG = 4.7Ω, VGS = 4.5V
(see Figure 12)
30
200
ns
ns
td(off)
tf
Turn-off-delay time
fall time
VDD = 15V, ID = 45A,
RG =4.7Ω, VGS = 4.5V
(see Figure 12)
50
105
ns
ns



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