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DIM2400ESS12 Scheda tecnica(PDF) 2 Page - Dynex Semiconductor

Il numero della parte DIM2400ESS12
Spiegazioni elettronici  Single Switch IGBT Module
PDF  9 Pages
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Produttore elettronici  DYNEX [Dynex Semiconductor]
Homepage  http://www.dynexsemi.com
Logo DYNEX - Dynex Semiconductor

DIM2400ESS12 Scheda tecnica(HTML) 2 Page - Dynex Semiconductor

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SEMICONDUCTOR
DIM2400ESS12-A000
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures
2/9
www.dynexsemi.com
ABSOLUTE MAXIMUM RATINGS
Stresses above those listed under ‘Absolute Maximum Ratings’ may cause permanent damage to the device. In
extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package.
Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect
device reliability.
Tcase = 25° C unless stated otherwise
Symbol
Parameter
Test Conditions
Max.
Units
VCES
Collector-emitter voltage
VGE = 0V
1200
V
VGES
Gate-emitter voltage
±20
V
IC
Continuous collector current
Tcase = 85° C
2400
A
IC(PK)
Peak collector current
1ms, Tcase =115° C
4800
A
Pmax
Max. transistor power dissipation
Tcase = 25° C, Tj = 150° C
20830
kW
I
2t
Diode I
2t value (IGBT arm)
VR = 0, tP = 10ms, Tvj = 125° C
900
kA
2S
Visol
Isolation voltage – per module
Commoned terminals to base plate. AC RMS, 1 min, 50Hz
2500
V



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