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DS1315EN-5/T Scheda tecnica(PDF) 13 Page - Dallas Semiconductor |
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DS1315EN-5/T Scheda tecnica(HTML) 13 Page - Dallas Semiconductor |
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13 / 22 page ![]() DS1315 Phantom Time Chip 13 of 22 AC ELECTRICAL OPERATING CHARACTERISTICS ROM/RAM = VCCO (0°C to 70°C; VCC = 3.3 ± 10%) PARAMETER SYMBOL MIN TYP MAX UNITS NOTES Read Cycle Time tRC 120 ns CEI Access Time tCO 100 ns OE Access Time tOE 100 ns CEI to Output Low Z tCOE 5 ns OE to Output Low Z tOEE 5 ns CEI to Output High Z tOD 40 ns OE to Output High Z tODO 40 ns Address Setup Time tAS 10 ns Address Hold Time tAH 10 ns Read Recovery tRR 20 ns Write Cycle tWC 120 ns CEI Pulse Width tCW 100 ns OE Pulse Width tOW 100 ns Write Recovery tWR 20 ns 4 Data Setup tDS 45 ns 5 Data Hold Time tDH 0 ns 5 RST Pulse Width tRST 120 ns CAPACITANCE (tA = 25°C) PARAMETER SYMBOL MIN TYP MAX UNITS NOTES Input Capacitance CIN 10 pF Output Capacitance COUT 10 pF |
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