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MS65R400R-R-B Scheda tecnica(PDF) 4 Page - JILIN SINO-MICROELECTRONICS CO., LTD.

Il numero della parte MS65R400R-R-B
Spiegazioni elettronici  N-CHANNEL MOSFET
PDF  10 Pages
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Produttore elettronici  JSMC [JILIN SINO-MICROELECTRONICS CO., LTD.]
Homepage  http://www.hwdz.com.cn
Logo JSMC - JILIN SINO-MICROELECTRONICS CO., LTD.

MS65R400R-R-B Scheda tecnica(HTML) 4 Page - JILIN SINO-MICROELECTRONICS CO., LTD.

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R
MS65R400R
版本：202303A
4/10
电特性 ELECTRICAL CHARACTERISTICS
开关特性 Switching Characteristics
延迟时间 Turn-On delay time
td(on)
VDD=400V,ID=11A,RG=25Ω,
VGS=10V
（note 4，5）
-
30
-
ns
上升时间 Turn-On rise time
tr
-
40
-
ns
延迟时间 Turn-Off delay time
td(off)
-
95
-
ns
下降时间 Turn-Off Fall time
tf
-
31
-
ns
栅极电荷总量 Total Gate Charge
Qg
VDS =520V ,
ID=11A
VGS =10V
（note 4，5）
-
22
-
nC
栅－源电荷 Gate-Source charge
Qgs
-
6
-
nC
栅－漏电荷 Gate-Drain charge
Qgd
-
7
-
nC
漏－源二极管特性及最大额定值 Drain-Source Diode Characteristics and Maximum Ratings
正向最大连续电流
Maximum Continuous Drain
-Source Diode Forward Current
IS
-
-
11
A
正向最大脉冲电流
Maximum Pulsed Drain-Source
Diode Forward Current
ISM
-
-
33
A
正向压降
Drain-Source Diode Forward
Voltage
VSD
VGS=0V,
IS=11A
-
0.9 1.2
V
反向恢复时间
Reverse recovery time
trr
Vr=400V, IF= IS
dIF/dt=100A/μs
(note 4)
-
120
-
ns
反向恢复电荷
Reverse recovery charge
Qrr
-
2.3
-
μC
热特性 THERMAL CHARACTERISTIC
项
目
Parameter
符
号
Symbol
最大 Max
单
位
Unit
MS65R400R/DPAK
MS65R400R/TO-220MF-K1
结到管壳的热阻
Thermal Resistance, Junction
to Case
Rth(j-c)
1
4
℃/W
结到环境的热阻
Thermal Resistance,
Junction to Ambient
Rth(j-A)
150
68
℃/W



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