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MS65R400R-R-A Scheda tecnica(PDF) 4 Page - JILIN SINO-MICROELECTRONICS CO., LTD. |
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MS65R400R-R-A Scheda tecnica(HTML) 4 Page - JILIN SINO-MICROELECTRONICS CO., LTD. |
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4 / 10 page ![]() R MS65R400R 版本:202303A 4/10 电特性 ELECTRICAL CHARACTERISTICS 开关特性 Switching Characteristics 延迟时间 Turn-On delay time td(on) VDD=400V,ID=11A,RG=25Ω, VGS=10V (note 4,5) - 30 - ns 上升时间 Turn-On rise time tr - 40 - ns 延迟时间 Turn-Off delay time td(off) - 95 - ns 下降时间 Turn-Off Fall time tf - 31 - ns 栅极电荷总量 Total Gate Charge Qg VDS =520V , ID=11A VGS =10V (note 4,5) - 22 - nC 栅-源电荷 Gate-Source charge Qgs - 6 - nC 栅-漏电荷 Gate-Drain charge Qgd - 7 - nC 漏-源二极管特性及最大额定值 Drain-Source Diode Characteristics and Maximum Ratings 正向最大连续电流 Maximum Continuous Drain -Source Diode Forward Current IS - - 11 A 正向最大脉冲电流 Maximum Pulsed Drain-Source Diode Forward Current ISM - - 33 A 正向压降 Drain-Source Diode Forward Voltage VSD VGS=0V, IS=11A - 0.9 1.2 V 反向恢复时间 Reverse recovery time trr Vr=400V, IF= IS dIF/dt=100A/μs (note 4) - 120 - ns 反向恢复电荷 Reverse recovery charge Qrr - 2.3 - μC 热特性 THERMAL CHARACTERISTIC 项 目 Parameter 符 号 Symbol 最大 Max 单 位 Unit MS65R400R/DPAK MS65R400R/TO-220MF-K1 结到管壳的热阻 Thermal Resistance, Junction to Case Rth(j-c) 1 4 ℃/W 结到环境的热阻 Thermal Resistance, Junction to Ambient Rth(j-A) 150 68 ℃/W |
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