GL9435

Page: 2/4

ISSUED DATE :2005/02/18

REVISED DATE :

Electrical Characteristics(Tj = 25

Unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Drain-Source Breakdown Voltage

-30

-

-

V

Breakdown Voltage Temperature Coefficient

Tj

-

-0.02

-

V/ :

Gate Threshold Voltage

-1.0

-

-3.0

V

Forward Transconductance

-

10

-

S

Gate-Source Leakage Current

-

-

D100

nA

Drain-Source Leakage Current(Tj=25 : )

-

-

-1

uA

Drain-Source Leakage Current(Tj=70 : )

-

-

-25

uA

-

-

50

-

-

100

m Ł

-

9.2

16

Gate-Source Charge

-

2.8

-

Gate-Drain (“Miller”) Change

-

5.2

-

nC

-

11

-

Rise Time

-

8

-

Turn-off Delay Time

-

25

-

Fall Time

-

17

-

ns

Input Capacitance

-

507

912

Output Capacitance

-

222

-

Reverse Transfer Capacitance

-

158

-

pF

f=1.0MHz

Source-Drain Diode

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

-

-

-1.2

V

Reverse Recovery Time

-

29

-

ns

Reverse Recovery Charge

-

20

-

nC

dI/dt=100A/ s

Notes: 1. Pulse width limited by Max. junction temperature.

2. Pulse width 300us, duty cycle 2%.