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SDT40H100CTFP Scheda tecnica(PDF) 1 Page - Inchange Semiconductor Company Limited |
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SDT40H100CTFP Scheda tecnica(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() Schottky Barrier Diode SDT40H100CTFP www.iscsemi.com 1 FEATURES · Ultra Low IR · Low VF · High reliability at higher temperatures APPLICATIONS · AC adapte · DC-DC converters · High frequency operation ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM VRWM VR Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage 100 V IF(AV) Average Rectified Forward Current per Leg Total 20 2*20 A IFSM Peak Forward Surge Current ( Sine wave, 10ms 1shot) 200 A TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case per leg 4 ℃ /W ELECTRICAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS TYP MAX UNIT VF Maximum Instantaneous Forward Voltage IF= 2 0A 0.64 0.7 V IF= 2 0 A , T J = 1 2 5 ℃ 0.60 0.67 IR Maximum Instantaneous Reverse Current VR= 100V -- 120 μ A VR= 100V, T J = 1 2 5 ℃ -- 130 |
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