2/4

ISSUED DATE :2005/08/08

REVISED DATE :

Electrical Characteristics(Tj = 25

Unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Drain-Source Breakdown Voltage

40

-

-

V

Breakdown Voltage Temperature Coefficient

Tj

-

0.1

-

V/ :

Gate Threshold Voltage

1.0

-

3.0

V

Forward Transconductance

-

11

-

S

Gate-Source Leakage Current

-

-

D100

nA

Drain-Source Leakage Current(Tj=25 : )

-

-

1

uA

Drain-Source Leakage Current(Tj=70 : )

-

-

25

uA

-

-

28

-

-

40

m Ł

-

13

20

Gate-Source Charge

-

4

-

Gate-Drain (“Miller”) Change

-

7

-

nC

-

10

-

Rise Time

-

8

-

Turn-off Delay Time

-

26

-

Fall Time

-

9

-

ns

Input Capacitance

-

1170

1870

Output Capacitance

-

180

-

Reverse Transfer Capacitance

-

116

-

pF

f=1.0MHz

Source-Drain Diode

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

-

-

1.2

V

-

24

-

ns

Reverse Recovery Charge

-

18

-

nC

dI/dt=100A/ s

Notes: 1. Pulse width limited by Max. junction temperature.

2. Pulse width 300us, duty cycle 2%.