GSMBD2004

Page: 1/2

ISSUED DATE :2005/12/23

REVISED DATE :

G

S U R F A C E M O U N T, S W I T C H I N G D I O D E

V O L T A G E 3 0 0 V, C U R R E N T 0 . 2 2 5 A

Description

The GSMBD2004 is designed for ultra high speed switching.

Package Dimensions

Millimeter

Millimeter

REF.

Min.

Max.

REF.

Min.

Max.

A

0.80

1.10

L1

0.42 REF.

A1

0

0.10

L

0.15

0.35

A2

0.80

1.00

b

0.25

0.40

D

1.80

2.20

c

0.10

0.25

E

1.15

1.35

e

0.65 REF.

HE

1.80

2.40

Q1

0.15 BSC.

Parameter

Symbol

Ratings

Unit

Repetitive Peak Reverse Voltage

300

V

Continuous reverse voltage

240

V

RMS Reverse Voltage

170

V

Forward Continuous Current

225

mA

4

Non-Repetitive Peak Forward surge Current @Tp =1.0us

@Tp=1.0s

1

A

Typical Junction Capacitance between Terminal (Note1)

5.0

pF

Max. Reverse Recovery Time (Note2)

50

nSec

Power Dissipation

PD

350

mW

Thermal Resistance Junction to Ambient Air

357

/W

:

Operation and Storage Temperature Range

-65 ~ +150

:

Characteristics

Symbol

Min.

Max.

Unit

Test Conditions

Reverse Breakdown Voltage

300

-

V

0.85

V

-

1

V

Forward Voltage

-

1.25

V

100

nA

Reverse Current

-

100

uA

Notes: 1. Measured at 1.0 MHz and applied reverse voltage of 0 volts.

3. ESD sensitive product handling required.