GSMBTA64 datasheet(1/2 Pages) GTM

Il numero della parte	GSMBTA64

Spiegazioni elettronici	PNP SILICON TRANSISTOR

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Produttore elettronici	GTM [GTM CORPORATION]

Homepage	http://www.gtm.com.tw

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GSMBTA56

Page: 1/2

ISSUED DATE :2005/08/31

REVISED DATE :

G

G S

S M

M B

B T

TA

A6644

P

P N

N P

P S

S II L

L II C

C O

O N

N T

T R

R A

A N

N S

S II S

S T

T O

O R

R

Description

The GSMBTA64 is designed for application requiring extremely high current gain at collector to 500mA.

Features

&High D.C. Current Gain

&Complementary to GSMBTA14

Package Dimensions

Millimeter

REF.

Min.

Max.

REF.

Min.

Max.

A

0.80

1.10

L1

0.42 REF.

A1

0

0.10

L

0.15

0.35

A2

0.80

1.00

b

0.25

0.40

D

1.80

2.20

c

0.10

0.25

E

1.15

1.35

e

0.65 REF.

HE

1.80

2.40

Q1

0.15 BSC.

Absolute Maximum Ratings at Ta = 25 ::::

Parameter

Symbol

Ratings

Unit

Junction Temperature

Tj

+150

Storage Temperature

Tstg

-55~+150

Collector to Base Voltage

VCBO

-30

V

Collector to Emitter Voltage

VCEO

-30

V

Emitter to Base Voltage

VEBO

-10

V

Collector Current

IC

-500

mA

Total Power Dissipation

PD

225

mW

Electrical Characteristics(Ta = 25 : ,unless otherwise noted)

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

BVCBO

-30

-

V

IC=-100uA, IE=0

BVCEO

-30

-

V

IC=-100uA, IB=0

BVEBO

-10

-

V

IE=-10uA, IC=0

ICBO

-

-100

nA

VCB=-30V, IE=0

IEBO

-

-100

nA

VEB=-10V, IC=0

*VCE(sat)

-

-1.5

V

IC=-100mA, IB=-0.1mA

*VBE(on)

-

-2

V

VCE=-5V, IC=-100mA

*hFE1

10K

-

VCE=-5V, IC=-10mA

*hFE2

20K

-

VCE=-5V, IC=-100mA

fT

125

-

MHz

VCE=-5V, IC=-100mA, f=100MHz

* Pulse Test: Pulse Width 380 s, Duty Cycle 2%

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