ABB Semiconductors AG

5SDA 27F2002

Doc. No. 5SYA 1127 - 01 Apr-98

ABB Semiconductors AG

Fabrikstrasse 3

CH-5600 Lenzburg, Switzerland

Telephone +41 (0)62 888 6419

Fax

+41 (0)62 888 6306

On-state

Max. average on-state current

2700 A

Max. RMS on-state current

4240 A

Max. peak non-repetitive

31.0 kA

tp

=

10 ms

160°C

surge current

33.5 kA

tp

=

8.3 ms

After surge:

I

Limiting load integral

4805

tp

=

10 ms

≈ 0V

4680

tp

=

8.3 ms

Threshold voltage

0.79 V

= 2000 - 6000 A

160°C

Slope resistance

0.09 m

Ω

On-state voltage

1.05 V

=

4000 A

25°C

On-state voltage

1.20 V

Thermal

Storage and operating

-40...160°C

junction temperature range

Thermal resistance

40 K/kW Anode side cooled

junction to case

40 K/kW Cathode side cooled

20 K/kW Double side cooled

Thermal resistance case to

10 K/kW Single side cooled

heat sink

5 K/kW Double side cooled

I

=

-V

+

(V )

4 * f * r * P

2 * f

r

FAVM

F0

F0

2

f

2

f

2

+

*

where

P =

T

- T

R

J max

C

thjc

or

P =

T

- T

R

J max

A

thja

Analytical function for transient thermal impedance:

Z

(t) =

R (1- e

)

thJC

i

-t /

i 1

4

i

τ

=

∑

i

1

2

3

4

11.83

4.26

1.63

2.28

τ

0.432

0.071

0.01

0.0054

t [s]

2

3 4 5 6 7

2

3 4 5 6 7

2

3 4 5 5 6

2

3 4 5 6 7

0

4

8

12

16

20

24

F

Double Side Cooling

Z

th

[K/kW]

P (W)

Ω)

f

1

for DC current

2.5

for half-sine wave

3.1

for 120°el., sine

6

for 60° el., sine