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UT2327-AE3-R Scheda tecnica(PDF) 2 Page - Unisonic Technologies

Il numero della parte UT2327-AE3-R
Spiegazioni elettronici  P-CHANNEL ENHANCEMENT MODE
PDF  5 Pages
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Produttore elettronici  UTC [Unisonic Technologies]
Homepage  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

UT2327-AE3-R Scheda tecnica(HTML) 2 Page - Unisonic Technologies

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UT2327
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
2 of 5
www.unisonic.com.tw
QW-R502-108,A
ABSOLUTE MAXIMUM RATINGS (Ta = 25℃, unless otherwise specified)
PARAMETER
SYMBOL
RATING
UNITS
Drain-Source Voltage
VDS
- 20
V
Gate-Source Voltage
VGS
± 12
V
Ta=25℃
-2.6
A
Continuous Drain Current (Note 3)
Ta=70℃
ID
-2.1
A
Pulsed Drain Current (Note 1, 2)
IDM
-10
A
Total Power Dissipation (Ta=25℃)
PD
1.38
W
Junction Temperature
TJ
+150
℃
Storage Temperature
TSTG
-55 ~ +150
℃
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
SYMBOL
MIN
TYP
MAX
UNIT
Junction to Ambient (Note 3)
θJA
90
/W
℃
ELECTRICAL CHARACTERISTICS (TJ=25℃, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNITS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS=0V, ID=-250uA
-20
V
TJ=25℃
VDS=-20V, VGS=0V
-1
uA
Drain-Source Leakage Current
TJ=70℃
IDSS
VDS=-16V, VGS=0V
-10
uA
Gate-Source Leakage Current
IGSS
VGS=±12V
±100
nA
Breakdown Voltage Temperature Coefficient ∆BVDSS/∆TJ Reference to 25℃, ID=-1mA
-0.1
V/℃
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=-250uA
-0.5
V
VGS=-5V, ID=-2.8A
130
mΩ
Drain-Source On-State Resistance (Note 2)
RDS(ON)
VGS=-2.8V, ID=-2.0A
190
mΩ
Forward Transconductance
gFS
VDS=-5V, ID=-2.8A
4.4
S
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
295
pF
Output Capacitance
COSS
170
pF
Reverse Transfer Capacitance
CRSS
VGS=0V, VDS=-6V, f=1.0MHz
65
pF
SWITCHING CHARACTERISTICS
Turn-ON Delay Time (Note 2)
tD(ON)
5.2
ns
Turn-ON Rise Time
tR
9.7
ns
Turn-OFF Delay Time
tD(OFF)
19
ns
Turn-OFF Fall Time
tF
VDS=-15V, VGS=-10V,
ID=-1A, RG=6Ω, RD=15Ω
29
ns
Total Gate Charge (Note 2)
QG
5.2
10
nC
Gate-Source Charge
QGS
1.36
nC
Gate-Drain Charge
QGD
VDS=-6V, VGS=-5V, ID=-2.8A
0.6
nC
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage(Note2)
VSD
TJ=25℃, IS=-1.6A, VGS=0V
-1.2
V
Maximum Continuous Drain-Source Diode
Forward Current
IS
VD=VG=0V, VS=-1.2V
-1
A
Maximum Pulsed Drain-Source Diode
Forward Current (Note 1)
ISM
-10
A
Notes: 1. Pulse width limited by TJ(MAX)
2. Pulse width ≤300us, duty cycle ≤2%.
3. Surface mounted on 1 in
2 copper pad of FR4 board; 270℃/W when mounted on min.



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