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2SC6071 Scheda tecnica(PDF) 2 Page - Sanyo Semicon Device

Il numero della parte 2SC6071
Spiegazioni elettronici  NPN Epitaxial Planar Silicon Transistor High-Current Switching Applications
PDF  4 Pages
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Produttore elettronici  SANYO [Sanyo Semicon Device]
Homepage  https://www.sanyo-av.com/us/
Logo SANYO - Sanyo Semicon Device

2SC6071 Scheda tecnica(HTML) 2 Page - Sanyo Semicon Device

  2SC6071 Datasheet HTML 1Page - Sanyo Semicon Device 2SC6071 Datasheet HTML 2Page - Sanyo Semicon Device 2SC6071 Datasheet HTML 3Page - Sanyo Semicon Device 2SC6071 Datasheet HTML 4Page - Sanyo Semicon Device  
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2SC6071
No. A0271-2/4
Continued from preceding page.
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Collector-to-Base Breakdown Voltage
V(BR)CBO
IC=100µA, IE=0A
120
V
Collector-to-Emitter Breakdown Voltage
V(BR)CES
IC=100µA, RBE=0Ω
120
V
Collector-to-Emitter Breakdown Voltage
V(BR)CEO
IC=1mA, RBE=∞
50
V
Emitter-to-Base Breakdown Voltage
V(BR)EBO
IE=100µA, IC=0A
8
V
Turn-On Time
ton
See specified Test Circuit.
40
ns
Storage Time
tstg
See specified Test Circuit.
1000
ns
Fall Time
tf
See specified Test Circuit.
80
ns
Package Dimensions
Package Dimensions
unit : mm
unit : mm
7518-003
7003-003
Switching Time Test Circuit
6.5
5.0
2.3
0.5
12
4
3
0.85
0.7
1.2
0.6
0.5
2.3
2.3
1 : Base
2 : Collector
3 : Emitter
4 : Collector
SANYO : TP
VR
RB
VCC=20V
VBE= --5V
+
+
50
Ω
INPUT
OUTPUT
RL
100
µF
470
µF
PW=20
µs
IB1
D.C.
≤1%
IB2
IC=20IB1= --20IB2=3A
6.5
5.0
2.3
0.5
12
4
3
0.85
0.6
0.5
1.2
2.3
2.3
0 to 0.2
1 : Base
2 : Collector
3 : Emitter
4 : Collector
SANYO : TP-FA



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