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BUF550 Scheda tecnica(PDF) 2 Page - Inchange Semiconductor Company Limited |
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BUF550 Scheda tecnica(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 3 page ![]() isc Silicon NPN Power Transistors BUF550 www.iscsemi.com 2 ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CBO Collector-Base Breakdown Voltage IC= 1μA; IE= 0 20 -- -- V ICBO Collector Cutoff Current VCB= 10V; IE= 0 -- -- 0.1 μ A IEBO Emitter Cutoff Current VEB= 1V; IC= 0 -- -- 0.1 μ A hFE DC Current Gain IC= 15mA; VCE= 5V 90 150 250 COB Output Capacitance VCB=8V,IE=0mA,f=1MHz -- 0.65 -- pF fT Current-Gain—Bandwidth Product VCE=8V,IC=40mA,f=1GHz -- 9 -- GHz PACKAGE OUTLINE Dimensions in mm (1mm = 0.0394“) |
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