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P4C150 Scheda tecnica(PDF) 3 Page - Pyramid Semiconductor Corporation

Il numero della parte P4C150
Spiegazioni elettronici  ULTRA HIGH SPEED 1K X 4 RESETTABLE STATIC CMOS RAM
PDF  11 Pages
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Produttore elettronici  PYRAMID [Pyramid Semiconductor Corporation]
Homepage  http://www.pyramidsemiconductor.com
Logo PYRAMID - Pyramid Semiconductor Corporation

P4C150 Scheda tecnica(HTML) 3 Page - Pyramid Semiconductor Corporation

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P4C150
Page 3 of 11
Document # SRAM105 REV A
Notes:
5.WE is HIGH for READ cycle.
6.CS and OE are LOW for READ cycle.
7.ADDRESS must be valid prior to, or concident with, CS transition
LOW, t
AA must still be met.
Min
Sym.
t
RC
t
AA
t
AC
t
HZ
t
OE
t
OLZ
Read Cycle Time
Chip Select Access Time
Output Hold from
Address Change
Chip Enable to
Output in Low Z
Chip Disable to
Output in High Z
Output Enable to
Data Valid
Output Enable to
Output in Low Z
-10
-12
-15
-20
-25
-35
Unit
ns
ns
ns
ns
ns
ns
ns
ns
Min
Max
10
8
4
10
2
2
AC CHARACTERISTICS—READ CYCLE
(V
CC = 5V ± 10%, All Temperature Ranges)
(2)
12
2
2
Max
12
10
6
Min
15
2
2
Max
15
12
8
Min
20
2
2
Max
20
14
10
Min
25
2
2
Max
25
15
13
Min
35
2
2
Max
35
35
15
Parameter
Address Access Time
t
OH
t
LZ
t
OHZ
Output Disable to
Output in High Z
7
9
10
14
15
20
22
2
2
2
2
57
9
11
13
16
ns
TIMING WAVEFORM OF READ CYCLE NO. 1(5,6)
8. Transition is measured ±200 mV from steady state voltage
prior to change, with loading as specified in Figure 1.
9. Read Cycle Time is measured from the last valid address to
the first transitioning address.
TIMING WAVEFORM OF READ CYCLE NO. 2 (CS
CS
CS
CS
CS CONTROLLED)(5,7)



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