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P4C1258-15PI Scheda tecnica(PDF) 2 Page - Pyramid Semiconductor Corporation

Il numero della parte P4C1258-15PI
Spiegazioni elettronici  ULTRA HIGH SPEED 64K x 4 STATIC CMOS RAM
PDF  9 Pages
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Produttore elettronici  PYRAMID [Pyramid Semiconductor Corporation]
Homepage  http://www.pyramidsemiconductor.com
Logo PYRAMID - Pyramid Semiconductor Corporation

P4C1258-15PI Scheda tecnica(HTML) 2 Page - Pyramid Semiconductor Corporation

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P4C1258
Page 2 of 9
Document # SRAM123 REV OR
MAXIMUM RATINGS(1)
Symbol
Parameter
Value
Unit
V
CC
Power Supply Pin with
–0.5 to +7
V
Respect to GND
Terminal Voltage with
–0.5 to
V
TERM
Respect to GND
V
CC +0.5
V
(up to 7.0V)
T
A
Operating Temperature
–55 to +125
°C
Symbol
Parameter
Value
Unit
T
BIAS
Temperature Under
–55 to +125
°C
Bias
T
STG
Storage Temperature
–65 to +150
°C
P
T
Power Dissipation
1.0
W
I
OUT
DC Output Current
50
mA
RECOMMENDED OPERATING
TEMPERATURE AND SUPPLY VOLTAGE
Industrial
Commercial
Grade(2)
Ambient
Temperature
GND
V
CC
–40°C to +85°C
0°C to +70°C
0V
0V
5.0V ± 10%
5.0V ± 10%
Symbol
C
IN
C
OUT
Parameter
Input Capacitance
Output Capacitance
Conditions
V
IN = 0V
V
OUT = 0V
5
7
Unit
pF
pF
CAPACITANCES(4)
V
CC = 5.0V, TA = 25°C, f = 1.0MHz
DC ELECTRICAL CHARACTERISTICS
Over recommended operating temperature and supply voltage(2)
Notes:
1. Stresses greater than those listed under MAXIMUM RATINGS may
cause permanent damage to the device. This is a stress rating only
and functional operation of the device at these or any other conditions
above those indicated in the operational sections of this specification
is not implied. Exposure to MAXIMUM rating conditions for extended
periods may affect reliability.
2. Extended temperature operation guaranteed with 400 linear feet per
minute of air flow.
3. Transient inputs with V
IL and IIL not more negative than –3.0V and
–100mA, respectively, are permissible for pulse widths up to 20 ns.
4. This parameter is sampled and not 100% tested.
Typ.
I
SB
Standby Power Supply
Current (TTL Input Levels)
CE
≥ V
IH
V
CC = Max ., f = Max., Outputs Open
___
35
10
mA
mA
___
CE
≥ V
HC
V
CC = Max., f = 0, Outputs Open
V
IN ≤ VLC or VIN ≥ VHC
Standby Power Supply
Current
(CMOS Input Levels)
I
SB1
Symbol
V
IH
V
IL
V
HC
V
LC
V
CD
V
OL
V
OH
I
LI
I
LO
Parameter
Input High Voltage
Input Low Voltage
CMOS Input High Voltage
CMOS Input Low Voltage
Input Clamp Diode Voltage
Output Low Voltage
(TTL Load)
Output High Voltage
(TTL Load)
Input Leakage Current
Output Leakage Current
Test Conditions
V
CC = Min., IIN = 18 mA
I
OL = +8 mA, VCC = Min.
I
OH = –4 mA, VCC = Min.
V
CC = Max.
V
IN = GND to VCC
V
CC = Max., CE = VIH
V
OUT = GND to VCC
P4C1258
Min
2.2
–0.5(3)
V
CC –0.2
–0.5(3)
2.4
–5
–5
Max
V
CC +0.5
0.8
V
CC +0.5
0.2
–1.2
0.4
+5
+5
Unit
V
V
V
V
V
V
V
µA
µA



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