P4C167-35JM datasheet(4/10 Pages) PYRAMID

Il numero della parte	P4C167-35JM

Spiegazioni elettronici	ULTRA HIGH SPEED 16K X 1 STATIC CMOS RAMS

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Produttore elettronici	PYRAMID [Pyramid Semiconductor Corporation]

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P4C167

Page 4 of 10

Document # SRAM106 REV A

Notes:

5. CE is LOW and WE is HIGH for READ cycle.

6. WE is HIGH, and address must be valid prior to or coincident with CE

transition LOW.

7. Transition is measured ±200mV from steady state voltage prior to

change with specified loading in Figure 1. This parameter is sampled

and not 100% tested.

8. Read Cycle Time is measured from the last valid address to the first

transitioning address.

TIMING WAVEFORM OF READ CYCLE NO. 2(6)

TIMING WAVEFORM OF READ CYCLE NO. 1(5)

Symbol

Parameter

Read Cycle Time

Address Access

Time

Chip Enable

Access Time

Output Hold from

Address Change

Chip Enable to

Output in Low Z

Chip Disable to

Output in High Z

Chip Enable to

Power Up Time

Chip Disable to

Power Down Time

Min

Max

–10

–12

–15

–20

–25

–35

–45

Unit

AC CHARACTERISTICS—READ CYCLE

CC = 5V ± 10%, All Temperature Ranges)

(2)

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