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P4C168-35JM Scheda tecnica(PDF) 4 Page - Pyramid Semiconductor Corporation |
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P4C168-35JM Scheda tecnica(HTML) 4 Page - Pyramid Semiconductor Corporation |
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4 / 15 page ![]() P4C168, P4C169, P4C170 Page 4 of 15 Document # SRAM107 REV A Notes: 7. ADDRESS must be valid prior to, or coincident with CE/CS transition low. For Fast CS, t AA must still be met. 8. Transition is measured ±200mV from steady state voltage prior to change, with loading as specified in Figure 1. 9. Read Cycle Time is measured from the last valid address to the first transitioning address. TIMING WAVEFORM OF READ CYCLE NO. 2 (CE CE CE CE CE/CS CS CS CS CS CONTROLLED)(5,7) TIMING WAVEFORM OF READ CYCLE NO. 3—P4C170 ONLY (OE OE OE OE OE CONTROLLED)(5) TIMING WAVEFORM OF READ CYCLE NO. 1 (ADDRESS CONTROLLED)(5,6) Notes: 5. WE is HIGH for READ cycle. 6. CE/CS and OE are LOW for READ cycle. |
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