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BYV42EB-200 Scheda tecnica(PDF) 1 Page - Inchange Semiconductor Company Limited |
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BYV42EB-200 Scheda tecnica(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() Ultrafast Rectifier Diode BYV42EB-200 www.iscsemi.com 1 FEATURES · High thermal cycling performance · Low on-state losses · Low thermal resistance · Soft recovery characteristic APPLICATIONS · Switched mode power supplies · Power Factor Correction (PFC) for Interleaved Topology ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM Peak Reverse voltage 200 V IF(AV) Average Rectified Forward Current ( both diodes conducting) δ = 0.5 ; TC ≤ 108°C; 30 A IFSM Non-repetitive Peak Surge Current per diode tp=10ms,sinusoidal 150 A TJ Max.Junction Temperature 150 ℃ Tstg Storage Temperature Range -40~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case Per diodes 2.4 ℃ /W 2 2 3 1 |
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