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ESH1PC Scheda tecnica(PDF) 3 Page - Vishay Siliconix |
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ESH1PC Scheda tecnica(HTML) 3 Page - Vishay Siliconix |
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3 / 4 page ![]() Document Number: 88895 Revision: 25-Jun-07 www.vishay.com 3 ESH1PB, ESH1PC & ESH1PD Vishay General Semiconductor New Product PACKAGE OUTLINE DIMENSIONS in inches (millimeters) Figure 3. Typical Instantaneous Forward Characteristics Figure 4. Typical Reverse Leakage Characteristics 0.4 0.6 0.8 1.2 1.4 0.1 10 1 100 0.01 1.0 0.2 1.6 Tj = 150 °C Tj = 125 °C Tj = 175 °C Tj = 25 °C Instantaneous Forward Voltage (V) 20 40 60 80 100 0.1 1 10 100 10 30 50 70 90 0.01 1000 Tj = 150 °C Tj = 125 °C Tj = 175 °C Tj = 25 °C Percent of Rated Peak Reverse Voltage (%) Figure 5. Typical Junction Capacitance Figure 6. Typical Transient Thermal impedance 0.1 10 1 100 1 100 10 1000 Reverse Voltage (V) 0.01 10 1 100 1 10 100 0.1 1000 t - Pulse Duration (s) 0.000 (0.00) 0.012 (0.30) 0.013 (0.35) 0.004 (0.10) 0.018 (0.45) 0.006 (0.15) 0.045 (1.15) 0.033 (0.85) 0.036 (0.91) 0.024 (0.61) 0.016 (0.40) 0.032 (0.80) 0.053 (1.35) 0.041 (1.05) 0.012 (0.30) REF 0.105 (2.67) 0.025 (0.635) 0.100 (2.54) 0.030 (0.762) 0.050 (1.27) Cathode band 0.142 (3.61) 0.126 (3.19) 0.158 (4.00) 0.146 (3.70) 0.086 (2.18) 0.074 (1.88) 0.087 (2.20) 0.103 (2.60) DO-220AA (SMP) |
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