| Motore di ricerca datesheet componenti elettronici |
|
ISF1029 Scheda tecnica(PDF) 2 Page - Inchange Semiconductor Company Limited |
|
|
|||||||||||||||||||||||||||||
ISF1029 Scheda tecnica(HTML) 2 Page - Inchange Semiconductor Company Limited |
|
2 / 3 page ![]() ISF1029 N-Channel MOSFET Transistor ELECTRICAL CHARACTERISTICS (TC=25 ℃) SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT V(BR)DSS Drain-Source Breakdown Voltage VGS= 0, ID= 0.25mA 450 -- -- V IDSS Zero Gate Voltage Drain Current VDS= 500V, VGS= 0 -- -- 50 uA IGSS Gate-Body Leakage Current VGS= ±30V,VDS= 0 -- -- ± 100 nA VGS(th) Gate Threshold Voltage VDS= VGS, ID= 0.25mA 2.0 -- 4.0 V RDS(on) Drain-Source On-Resistance VGS= 20V, ID= 10A -- -- 300 m Ω gFS Forward Transconductance VDS =25V, ID=10A -- 30 -- S Ciss Input Capacitance VGS=0V, VDS=25V, f=1.0MHZ -- 6072 -- pF Coss Output Capacitance -- 632 -- Crss Reverse Transfer Capacitance -- 109 -- Qg Total Gate Charge VDD=250V, ID=20A, VGS=0 to 10V -- 153 -- nC Qgs Gate-Source Charge -- 41 -- Qgd Gate-Drain Charge -- 86 -- td(on) Turn-on Delay Time VDD=250V, ID=10A, VGS=10V RG=25Ω -- 140 -- ns tr Turn-on Rise Time -- 480 -- td(off) Turn-off Delay Time -- 190 -- tf Turn-off Fall Time -- 162 -- www.iscsemi.com 2 |
|
|
Link URL |
| Lei ha avuto il aiuto da alldatasheet? [ DONATE ] |
Di alldatasheet | Richest di pubblicita | contatti | Privacy Policy | Collegamento alla scheda tecnica | scambio Link | Ricerca produttore All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |