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ARF370 Scheda tecnica(PDF) 3 Page - Power Semiconductors |
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ARF370 Scheda tecnica(HTML) 3 Page - Power Semiconductors |
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3 / 4 page ![]() ARF370 FAST RECOVERY DIODE FINAL SPECIFICATION feb 97 - ISSUE : 04 SWITCHING CHARACTERISTICS 25% di Irr REVERSE RECOVERY CHARGE - Tj = 150° 0 200 400 600 800 1000 1200 1400 0 100 200 300 400 di/dt [A/µs] 250 A 500 A 1000 A REVERSE RECOVERY CURRENT - Tj = 150° 0 100 200 300 400 500 600 700 800 0 100 200 300 400 di/dt [A/µs] 250 A 500 A 1000 A FORWARD RECOVERY VOLTAGE 0 20 40 60 80 100 120 140 160 180 0 200 400 600 800 1000 1200 di/dt [A/µs] Tj = 25 °C Tj 150 °C IF VFR VF ta ta = Irr / (di/dt) tb = trr - ta Softness (s factor) s = tb / ta Energy dissipation during recovery Er = Vr · (Qrr - Irr ·ta / 2 ) Irr Vr tb IF d i/d t POSEICO SPA POwer SEmiconductors Italian COrporation POSEICO |
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