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ARF694 Scheda tecnica(PDF) 1 Page - Power Semiconductors |
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ARF694 Scheda tecnica(HTML) 1 Page - Power Semiconductors |
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1 / 2 page ![]() FAST RECOVERY DIODE ARF694 FOR IGBT,IEGT,GCT APPLICATIONS Repetitive voltage up to 6000 V SNUBBERLESS OPERATION Mean forward current 645 A LOW LOSSES SOFT RECOVERY Surge current 10 kA TARGET SPECIFICATION mar 03 - ISSUE : 2 Symbol Characteristic Conditions Tj [°C] Value Unit BLOCKING V RRM Repetitive peak reverse voltage 120 6000 V V RSM Non-repetitive peak reverse voltage 120 6100 V I RRM Repetitive peak reverse current V=VRRM 120 mA V DC LINK Permanent DC voltage 120 3200 V CONDUCTING I F (AV) Mean forward current 180° sin ,50 Hz, Th=55°C, double side cooled 645 A I F (AV) Mean forward current 180° square,50 Hz,Th=55°C,double side cooled 675 A I FSM Surge forward current Sine wave, 10 ms 120 10 kA I² t I² t reapplied reverse voltage up to 50% VRSM 500 x1E3 A²s V FM Forward voltage Forward current = 1570 A 25 4.8 V V F(TO) Threshold voltage 120 2.10 V r F Forward slope resistance 120 1.80 mohm SWITCHING Q rr Reverse recovery charge I F = 1000 A di/dt= 250 A/µs 120 µC I rr Peak reverse recovery current VR = 100 V 120 A t rr Reverse recovery time I F = 1000 A µs Q rr Reverse recovery charge di/dt= 500 A/µs 2000 µC I rr Peak reverse recovery current VR = V 120 1150 A s Softness (s-factor), min E OFF Turn off energy dissipation J V FR Peak forward recovery di/dt= 500 A/µs 125 V MOUNTING R th(j-h) Thermal impedance Junction to heatsink, double side cooled 21 °C/kW R th(c-h) Thermal impedance Case to heatsink, double side cooled 3 °C/kW T j Operating junction temperature -30 / 120 °C F Mounting force 22.0 / 24.5 kN Mass 520 g ORDERING INFORMATION : ARF694 S 60 standard specification VRRM/100 POSEICO SPA POwer SEmiconductors Italian COrporation POSEICO POSEICO SPA Via N. Lorenzi 8, 16152 Genova - ITALY Tel. +39 010 6556234 - Fax +39 010 6557519 Sales Office: Tel. +39 010 6556775 - Fax +39 010 6442510 |
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