TN2529

Features

Low threshold - 2.0V max

High input impedance

Low input capacitance - 125pF max

Fast switching speeds

Low ON-resistance

Free from secondary breakdown

Low input and output leakage

Applications

Logic level interfaces – ideal for TTL and CMOS

Solid state relays

Battery operated systems

Photo voltaic devices

Analog switches

General purpose line drivers

Telecom switches

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General Description

The Supertex TN2529 is a low threshold enhancement-

mode

transistor

that

utilizes

an

advanced

vertical

DMOS structure and Supertex’s well-proven silicon-gate

manufacturing process. This combination produces a device

with the power handling capabilities of bipolar transistors,

and the high input impedance and positive temperature

coefficient inherent in MOS devices. Characteristic of all

MOS structures, this device is free from thermal runaway

and thermally-induced secondary breakdown.

Supertex’s vertical DMOS FETs are ideally suited to a

wide range of switching and amplifying applications where

very low threshold voltage, high breakdown voltage, high

input impedance, low input capacitance, and fast switching

speeds are desired.

Low Threshold N-Channel

Enhancement-Mode Vertical DMOS FET

Switching Waveforms and Test Circuit

90%

10%

90%

90%

10%

10%

PULSE

GENERATOR

OUTPUT

D.U.T.

t

(ON)

t

d(ON)

t

(OFF)

t

d(OFF)

t

F

t

r

INPUT

INPUT

OUTPUT

10V

V

DD

0V

0V