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BFU520 Scheda tecnica(PDF) 2 Page - Inchange Semiconductor Company Limited |
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BFU520 Scheda tecnica(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 3 page ![]() NPN Wideband Silicon RF Transistor BFU520 www.iscsemi.com 2 SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT hFE DC Current Gain IC= 15mA; VCE= 5V 90 -- 250 - Cre Output feedback capacitance VCB=8V,IE=0mA,f=1MHz -- -- 1 pF fT Current-Gain—Bandwidth Product VCE=8V,IC=40mA,f=1GHz -- 9 -- GHz hFE CLASSIFICATION Marking B C D hFE 90-130 120-180 170-250 PACKAGE OUTLINE Dimensions in mm (1mm = 0.0394“) PIN ARRANGEMENT Type Package Marking Pin arrangement BFU520X SOT-143B N43 1 2 3 4 Collector Emitter Base Emitter BFU520 SOT-143B N37 Collector Base Emitter Emitter DIM mm MIN MAX A 2.4 2.5 B 1.2 1.4 C 2.8 3 D 1.9 E 0.45 0.55 F 0.09 0.15 G 0.9 1.1 H 1.7 |
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