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FFB20UP30DN Scheda tecnica(PDF) 1 Page - Inchange Semiconductor Company Limited |
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FFB20UP30DN Scheda tecnica(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() Ultrafast Diode FFB20UP30DN www.iscsemi.com 1 FEATURES · Reverse Voltage : VRRM = 300 V · Max Forward Voltage, VF = 1.3 V APPLICATIONS · General Purpose · SMPS,Welder · Power Switching Circuits ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM VRWM VR Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage 300 V IF(AV) Average Rectified Forward Current (per Diode) 10 A IFSM Non-repetitive Peak Surge Current60Hz Single Half-Sine Wave 180 A TJ Junction Temperature 175 ℃ Tstg Storage Temperature Range -65~+175 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 2.0 ℃ /W ELECTRICAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS MAX UNIT VF Maximum Instantaneous Forward Voltage IF= 1 0 A ,TC= 25 ℃ 1.3 V IF= 10A ,TC= 150℃ 1.2 IR Maximum Instantaneous Reverse Current VR= 300V,TC= 25 ℃ 1 μ A VR= 300V,TC= 150 ℃ 500 |
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