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IXTT16N10D2 Scheda tecnica(PDF) 1 Page - Inchange Semiconductor Company Limited |
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IXTT16N10D2 Scheda tecnica(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() ISF1294 eq IXTT16N10D2 Depletion Mode MOSFET www.iscsemi.com 1 FEATURES · Drain Current -ID ( on) =16A@ TC=25℃ · Drain Source Voltage -VDSX= 100V(Min) · Static Drain-Source On-Resistance -RDS(on) = 64mΩ(Max)@VGS= 0V APPLICATIONS · Audio Amplifiers · Start-up Circuits · Protection Circuits Absolute Maximum Ratings(TC=25℃) SYMBOL PARAMETER VALUE UNIT VDSX Drain-Source Voltage 100 V VGSX Gate-Source Voltage-Continuous ± 20 V PD Total Dissipation @TC=25℃ 830 W TJ Max. Operating Junction Temperature 175 ℃ Tstg Storage Temperature -55~175 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 0.18 ℃ /W |
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