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BU508DFI Scheda tecnica(PDF) 2 Page - STMicroelectronics

Il numero della parte BU508DFI
Spiegazioni elettronici  HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
PDF  6 Pages
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Produttore elettronici  STMICROELECTRONICS [STMicroelectronics]
Homepage  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

BU508DFI Scheda tecnica(HTML) 2 Page - STMicroelectronics

  BU508DFI Datasheet HTML 1Page - STMicroelectronics BU508DFI Datasheet HTML 2Page - STMicroelectronics BU508DFI Datasheet HTML 3Page - STMicroelectronics BU508DFI Datasheet HTML 4Page - STMicroelectronics BU508DFI Datasheet HTML 5Page - STMicroelectronics BU508DFI Datasheet HTML 6Page - STMicroelectronics  
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THERMAL DATA
Rthj-case
Thermal Resistance Junction-case
Max
2.5
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25
oC unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ICES
Collector Cut-off
Current (VBE = 0)
VCE = 1500 V
VCE = 1500 V
Tj = 125
oC
1
2
mA
mA
IEBO
Emitter Cut-off Current
(IC = 0)
VEB = 5 V
300
mA
VCEO(sus)
∗ Collector-Emitter
Sustaining Voltage
(IB = 0)
IC = 100 m A
700
V
VCE(sat)
∗ Collector-Emitter
Saturation Voltage
IC = 4.5 A
IB = 2 A
1
V
VBE(sat)
∗ Base-Emitter
Saturation Voltage
IC = 4.5 A
IB = 2 A
1.3
V
ts
tf
INDUCTIVE LOAD
Storage Time
Fall Time
IC = 4.5 A
hFE = 2.5
VCC = 140 V
LC = 0.9 mH
LB = 3
µH
(see figure 1)
7
550
µs
ns
VF
Diode Forward Voltage
IF = 4 A
2
V
fT
Transition Frequency
IC = 0.1 A
VCE = 5 V
f = 5 MHz
7
MHz
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Safe Operating Area
Thermal Impedance
BU508DFI
2/6



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