BD135 datasheet(1/1 Pages) TEL

Il numero della parte	BD135

Spiegazioni elettronici	Plastic-Encapsulated Transistors

PDF	1 Pages

Scroll/Zoom	100%

Produttore elettronici	TEL [TRANSYS Electronics Limited]

Homepage	http://www.transyselectronics.com

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1 / 1 page

TO-126 Plastic-Encapsulate

d Transistors

BD135/BD137/BD139 TRANSISTOR (NPN)

FEATURES

Power dissipation

PCM:

1.25

W (Tamb=25

℃)

Collector current

ICM:

1.5

A

Operating and storage junction temperature range

TJ, Tstg: -55

℃ to +150℃

ELECTRICAL

CHARACTERISTICS (Tamb=25

℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

MIN

TYP

MAX

UNIT

BD135

45

BD137

60

Collector-base breakdown voltage

V(BR)CBO

Ic=

100µA, IE=0

BD139

80

V

BD135

45

BD137

60

Collector-emitter breakdown voltage

V(BR)CEO

Ic=

30mA, IB=0

BD139

80

V

Emitter-base breakdown voltage

V(BR)EBO

IE=100µA, IC=0

5

V

Collector cut-off current

ICBO

VCB=30V, IE=0

0.1

µA

Emitter cut-off current

IEBO

VEB=5V, IC=0

10

µA

hFE(1)

VCE=2V, IC=5mA

25

BD135

40

250

hFE(2)

VCE=2V, IC=150mA

BD137/BD139

40

160

DC current gain

hFE(3)

VCE=2V, IC=500mA

25

Collector-emitter saturation voltage

VCE(sat)

IC=500mA, IB=50mA

0.5

V

Base-emitter voltage

VBE

VCE=2V, IC=500mA

1

V

CLASSIFICATION OF

hFE(2)

Rank

6

10

16

Range

40-100

63-160

100-250

1 2 3

TO-126

1. EMITTER

2. COLLECTOR

3. BASE

Transys

Electronics

LI M ITE D

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