STG719STR datasheet(1/10 Pages) STMICROELECTRONICS

Il numero della parte	STG719STR

Spiegazioni elettronici	LOW VOLTAGE 4廓 SPDT SWITCH

PDF	10 Pages

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Produttore elettronici	STMICROELECTRONICS [STMicroelectronics]

Homepage	http://www.st.com

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November 2004

s

HIGH SPEED:

tPD = 0.3ns (TYP.) at VCC = 5V

tPD = 0.4ns (TYP.) at VCC = 3.3V

s

LOW POWER DISSIPATION:

ICC = 1µA(MAX.) at TA=25°C

s

LOW "ON" RESISTANCE:

RON = 4Ω (MAX. TA=25°C) AT VCC = 5V

RON = 6Ω (TYP.) AT VCC = 3V

s

WIDE OPERATING VOLTAGE RANGE:

VCC (OPR) = 1.8V TO 5.5V SINGLE SUPPLY

DESCRIPTION

The STG719 is an high-speed S.P.D.T. (Single

Pole Double Throw) SWITCH fabricated in silicon

gate C2MOS technology. It designed to operate

from 1.8V to 5.5V, making this device ideal for

portable applications, audio signal routing, video

switching, mobile and communication systems.

It offers 4

Ω ON-Resistance Max at 5V 25°C and

very low ON-Resistance Flatness. Additional key

features are fast switching speed (tON=7ns,

tOFF=4.5ns), Break Before Make Delay Time and

Low Power Consumption.

All

inputs

and

outputs

are

equipped

with

protection circuits against static discharge, giving

them ESD immunity and transient excess voltage.

It’s available in the commercial and extended

temperature range.

STG719

LOW VOLTAGE 4

Ω SPDT SWITCH

Figure 1: Pin Connection And IEC Logic Symbols

Table 1: Order Codes

PACKAGE

T & R

SOT23-6L

STG719STR

SOT23-6L

Rev. 8

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