MMBT6520L datasheet(1/3 Pages) ISC

Il numero della parte	MMBT6520L

Spiegazioni elettronici	isc Silicon PNP Power Transistor

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Produttore elettronici	ISC [Inchange Semiconductor Company Limited]

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isc Silicon PNP Power Transistor

MMBT6520L

DESCRIPTION

·

Collector-Emitter Sustaining Voltage-

: VCEO(SUS)= -350V(Min)

·

High DC Current Gain-

: hFE=30(Min)@ (VCE= -10V, IC= -10mA)

·

Low Saturation Voltage-

: VCE(sat)= -0.5V(Max)@ (IC= -30mA, IB= -3mA)

·

Minimum Lot-to-Lot variations for robust device

performance and reliable operation

APPLICATIONS

·

Designed for use as a driver in DC/DC converters and

actuators.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

-350

V

VCEO

Collector-Emitter Voltage

-350

V

VEBO

Emitter-Base Voltage

-5.0

V

IC

Collector Current-Continuous

-0.5

A

IB

Base Current-Continuous

-0.25

A

PT

Total Power Dissipation @TC=25℃

0.3

W

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature

-55~150

℃

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