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AX6646/A Scheda tecnica(PDF) 3 Page - AXElite technology co. ltd |
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AX6646/A Scheda tecnica(HTML) 3 Page - AXElite technology co. ltd |
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3 / 11 page ![]() 3/11 Axelite Confidential Materials, do not copy or distribute without written consent. Rev.1.6.Nov.14, 2019 AX6646/A ABSOLUTE MAXIMUM RATINGS (at TA=25°C) Characteristics Symbol Rating Unit VIN Pin Voltage VIN GND - 0.3 to + 6.5 V Output Voltage VOUT GND - 0.3 to VIN + 0.3 V EN Pin Voltage VEN GND - 0.3 to + 6.5 V FB Pin Voltage VFB GND - 0.3 to + 6.5 V Power Dissipation PD 400 mW Storage Temperature Range TST -40 to +150 °C Operating Junction Temperature TJ -40 to +125 °C Thermal Resistance from Junction to case θJC 180 °C/W Thermal Resistance from Junction to ambient θJA 250 °C/W Note : θJA is measured with the PCB copper area of approximately 1 in2(Multi-layer). ELECTRICAL CHARACTERISTICS (VIN=5V, TA=25°C unless otherwise noted) Characteristics Symbol Conditions Min Typ Max Units Input Voltage VIN (Note1) 2.6 - 6 V FB Voltage VFB VIN=2.6V to 6V, IOUT=1mA 0.784 0.8 0.816 V FB Input Leakage Current IFB VFB=1.0V -100 - 100 nA Adjustable Output Voltage Range VOUT VFB - 5.5 V Quiescent Current IQ IOUT =0mA, VIN=5V - 40 60 μA Shutdown Current ISD VIN=3.6V, VEN=0V - - 1 μA Dropout Voltage (Note 2) VDROP IOUT=300mA, VOUT>2.7V - 0.2 0.3 V Current Limit (Note 3) ILIMIT 400 600 - mA Short Circuit Current Ishort VOUT < 0.25*VOUT - 250 - mA Load Regulation (Note 4) ΔVLOAD IOUT=10m~300mA - - 0.02 %/mA Ripple Rejection PSRR CIN=1μF COUT=1uF IOUT =100mA F=120Hz - 65 - dB F=1KHz - 60 - Enable Input Threshold VENH Regulator Enable 2.0 - - V VENL Regulator Shutdown - - 0.4 Enable Pin Current IENH VEN=VIN - 0.003 0.1 μA IENL VEN=0V, VIN=3.6V - 0.35 1 Thermal Shutdown TSD - 150 - ºC Thermal Shutdown Hysterics TSH - 30 - ºC Note 1: Minimum VIN voltage is defined by output adds a dropout voltage. Note 2: The dropout voltage is defined as (VIN-VOUT), the performance of every AX6646/A part, see “Typical Performance Characteristics”. Note 3: Current limit is measured at constant junction temperature by using pulsed testing with a low ON time. Note 4: Regulation is measured at constant junction temperature by using pulsed testing with a low ON time. |
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